to-25 2 -2l plastic-encapsulate transistors mjd3055 transistor (npn) features z designed for general purpose amplifier and low speed s witching applications z electrically simiar to mje3055 z dc current gain specified to10 amperes maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 70 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current -continuous 10 a p c collector power dissipation 1.25 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo ic=1ma,i e =0 70 v collector-emitter breakdown voltage v (br)ceo ic=200 ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v i cbo v cb =70v,i e =0 0.02 ma collector cut-off current i ceo v cb =30v,i b =0 50 a emitter cut-off current i ebo v eb =5v,i c =0 0.5 ma h fe(1) v ce =4v,i c =4a 20 100 dc current gain h fe(2) v ce =4v,i c =10a 5 v ce(sat)(1) i c =4a, i b =0.4a 1.1 v collector-emitter saturation voltage v ce(sat)(2) i c =10a, i b =3.3a 8 v base-emitter voltage v be v ce =4v, i c =4a 1.8 v transition frequency f t v ce =10v,i c =0.5a,f=500kh z 2 mhz to-25 2- 2 l 1.base 2.collector 3.emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jun,2012
0.1 1 10 1 10 100 1000 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 100 200 300 400 500 600 10 12 14 16 18 20 110 1 10 100 1000 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0123456 0 1 2 3 4 5 6 100 1000 0.1 110 0.0 0.4 0.8 1.2 1.6 h fe ?? i c common emitter v ce =4v t a =25 t a =100 dc current gain h fe collector current i c (a) p c ?? t a collector power dissipation pc (w) ambient temperature t a ( ) f t ?? i c transition frequency f t (mhz) collector current i c (ma) 0.5 f=1mhz i e =0/ i c =0 t a =25 30 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v (v) =10 v besat ?? i c t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (a) common emitter t a =25 static characteristic collector current i c (a) collector-emitter voltage v ce (v) 60ma 54ma 48ma 42ma 36ma 30ma 24ma 18ma 12ma i b =6ma 3000 10 1 common emitter v ce =4v t a =100 t a =25 collector current i c (a) base-emmiter voltage v be (mv) mjd3055 i c ?? v be 0.3 v cesat ?? i c collector-emitter saturation voltage v cesat (v) collector current i c (a) =10,t a =25 =3,t a =25 =10,t a =100 =3,t a =100 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jun,2012
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